Low-temperature synthesis of SrBi2Ta2O9 thin films with Bi2SiO5-containing seed layers

Japanese Journal of Applied Physics

Volumn 41, Issue 12B, 2002, Pages L1492-L1494

  Wang, Xusheng ^a   Yamamoto, Shuu'ichirou ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bi2SiO5; Ferroelectric thin film; Seed layer; Sol gel; SrBi2Ta2O9

Indexed keywords

ANNEALING; COMPOSITE FILMS; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; LOW TEMPERATURE EFFECTS; SOL-GEL PROCESS; SOL-GELS; TEMPERATURE;

ANNEALING TEMPERATURES; CRYSTALLIZATION TEMPERATURE; FATIGUE PROPERTIES; FERROELECTRIC HYSTERESIS LOOP; LOW TEMPERATURE SYNTHESIS; SATURATED HYSTERESIS LOOPS; SEED LAYER; SRBI2TA2O9;

THIN FILMS;

EID: 33644969120     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.41.L1492     Document Type: Article

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