Use of difunctional silylation agents for enhanced repair of post plasma damaged porous low k dielectrics

Advanced Metallization Conference (AMC)

Volumn , Issue , 2006, Pages 325-331

  Nitta, S V ^a   Purushothaman, S ^a   Chakrapani, N ^d,e   Rodriguez, O ^d,e   Klymko, N ^b   Ryan, E Todd ^c   Bonilla, G ^b   Cohen, S ^a   Molis, S ^b   McCullough, K ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

^c AMD   (United States)

^d INTEL CORPORATION   (United States)

^e RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEXAMETHYLDISILAZANE (HMDS); SILYLATION; SILYLATION AGENTS; DIFUNCTIONAL SILYLATION AGENTS; INTERCONNECT STRUCTURE; ORGANOSILICATE;

PERMITTIVITY; PLASMAS; POROUS MATERIALS; SURFACE TENSION; HYDROPHOBICITY; INTERCONNECTION NETWORKS; PLASMA THEORY;

DIELECTRIC MATERIALS;

EID: 33644963010     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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