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Thin Solid Films

Volumn 505, Issue 1-2, 2006, Pages 10-15

Application of TEM to the development of information storage materials

(6) Petford Long, A K a,d Kohn, A a Bromwich, T a Jackson, V a Castano F b Singh, L J c

a UNIVERSITY OF OXFORD (United Kingdom)

b Massachusetts Institute of Technology Cambridge (United States)

c UNIVERSITY OF CAMBRIDGE (United Kingdom)

d ARGONNE NATIONAL LABORATORY (United States)

Author keywords

HREM; Lorentz TEM; Magnetic thin films; Tunnel magnetoresistance

Indexed keywords

HIGH RESOLUTION ELECTRON MICROSCOPY; MAGNETIC THIN FILMS; MAGNETIZATION; MAGNETORESISTANCE; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL MAPPING; LORENTZ TEM; MAGNETIC STRUCTURE; TUNNEL MAGNETORESISTANCE;

DATA STORAGE EQUIPMENT;

EID: 33644922662 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.10.010 Document Type: Article

Times cited : (8)

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