Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays

IEEE Transactions on Magnetics

Volumn 41, Issue 2, 2005, Pages 883-886

  Lee, Yun Ki ^a   Chun, Byong Sun ^a   Kim, Young Keun ^a   Hwang, Injun ^b   Park, Wanjun ^b   Kim, Taewan ^b   Kim, Hongseog ^c   Lee, Jangeun ^d   Jeong, Won Cheol ^d  

^a Korea University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c PaiChai University   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

Hard axis field; Magnetoresistive random access memory (MRAM); Remanent state; Switching field; Thermal effect

Indexed keywords

MAGNETIC DOMAINS; MAGNETIC FIELD EFFECTS; MAGNETIC STORAGE; MAGNETIZATION; MAGNETORESISTANCE; SWITCHING; THERMAL EFFECTS; TUNNEL JUNCTIONS;

HARD AXIS FIELDS; MAGNETIC TUNNEL JUNCTIONS (MTJ); MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM); REMANENT STATE; SWITCHING FIELDS;

RANDOM ACCESS STORAGE;

EID: 14544301387     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.842079     Document Type: Article

References (6)

1. J. Shi, S. Tehrani, T. F. Zheng, and J.-G. Zhu, "Magnetization vortices and anomalous switching in NiFeCo submicron array," Appl. Phys. Lett., vol. 74, p. 2525, 1999.
2. J. Shi and S. Tehrani, "Edge-pinned states in patternd submicron NiFeCo structures," Appl. Phys. Lett., vol. 77, p. 1692, 2000.
3. K. J. Lee, W. Park, and T. Kim, "Kink-free design of submicrometer MRAM cell," IEEE. Trans. Magn., vol. 39, no. 5, pp. 2842-2844, Sep. 2003.
4. B. D. Cullity, Introduction to Magnetic Materials. Reading, MA: Addison-Wesley, 1992.
5. W. Park, I. J. Hwang, T. Kim, K. J. Lee, and Y. K. Kim, "Anomalous switching in submicrometer magnetic tunnel junction arrays arising from magnetic vortex and domain wall pinning," J. Appl. Phys., vol. 96, p. 1748, 2004.
6. T. Nozaki, Y. Jiang, H. Sukegawa, N. Tezuka, A. Hirotata, K. Inomata, and S. Sugimoto, "Magnetic switching properties of magnetic tunnel junctions using a synthetic ferrimagnet free layer," J. Appl. Phys., vol. 95, p. 3745, 2004.