Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals

Crystal Research and Technology

Volumn 41, Issue 3, 2006, Pages 243-249

  Karabulut, O ^a   Parlak, M ^b   Turan, R ^b   Serincan, U ^b   Akinoglu B G ^b  

^a PAMUKKALE UNIVERSITY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Crystal growth; GaSe; Implantation; Layered crystals; Photoconductivity

Indexed keywords

CRYSTAL STRUCTURE; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SINGLE CRYSTALS;

GASE; LAYERED CRYSTALS; PHOTO-EXCITATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33644920693     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200510568     Document Type: Article

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