Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal

Crystal Research and Technology

Volumn 38, Issue 12, 2003, Pages 1071-1076

  Karabulut, O ^a   Parlak, M ^a   Yilmaz, K ^a   Turan, R ^a   Akinoglu, B G ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Conductivity; Crystal growth; Doped semiconductor; GaSe; Implantation; Photoconductivity

Indexed keywords

ANNEALING; CRYSTAL GROWTH; ELECTRIC PROPERTIES; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; ION IMPLANTATION; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SEMICONDUCTOR DOPING; SILICON; SINGLE CRYSTALS; STACKING FAULTS; STOICHIOMETRY; THERMAL CONDUCTIVITY;

PHOTOELECTRONIC DEVICES; THERMAL EXCITATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0346342578     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200310138     Document Type: Article

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