Electrical properties of nitrogen implanted GaSe single crystal

Crystal Research and Technology

Volumn 38, Issue 9, 2003, Pages 811-916

  Karabulut, O ^a   Parlak, M ^a   Turan, R ^a   Serincan, U ^a   Tasarkuyu, E ^a   Akinoglu, B G ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Crystal growth; Doped semiconductor; GaSe; Mobility; Resistivity; Scattering mechanism

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON MOBILITY; ELECTRON SCATTERING; HALL EFFECT; ION IMPLANTATION; NITROGEN; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMAL EFFECTS;

DONOR SINGLE ACCEPTOR MODEL; GALLIUM SELENIDE; HALL MOBILITIES; IONIZATION ENERGY; LATTICE SCATTERING MECHANISM; SCATTERING MECHANISM;

GALLIUM COMPOUNDS;

EID: 0141457823     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200310099     Document Type: Article

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