Epitaxial growth of AlN on Cu(1 1 1) substrates using pulsed laser deposition

Journal of Crystal Growth

Volumn 289, Issue 2, 2006, Pages 574-577

  Inoue, S ^a   Okamoto, K ^a   Matsuki, N ^b   Kim, Tae Won ^b   Fujioka, H ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

A1. Interfaces; A3. Laser epitaxy; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; ANNEALING; HIGH ENERGY ELECTRON DIFFRACTION; INTERFACES (MATERIALS); PULSED LASER DEPOSITION; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL LAYERS; LASER EPITAXY; SINGLE-CRYSTAL METAL SUBSTRATES;

EPITAXIAL GROWTH;

EID: 33644895189     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.072     Document Type: Article

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