Ion beam studies of MBE grown GaN films on (1 1 1) silicon substrates

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 188, Issue 1-4, 2002, Pages 73-77

  Alves, E ^a,b   Barradas, N P ^a,b,e   Monteiro, T ^c   Correia, R ^c   Kreissig, U ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^e EN 10   (Portugal)

Author keywords

ERDA; GaN epilayers; RBS channelling; RE luminescence

Indexed keywords

CRYSTALLINE MATERIALS; FILM GROWTH; GALLIUM NITRIDE; HEAVY IONS; ION BEAMS; LUMINESCENCE; MOLECULAR BEAM EPITAXY; RARE EARTH ELEMENTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SUBSTRATES;

STOICHIOMETRIC FILMS;

THIN FILMS;

EID: 0036534947     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01021-7     Document Type: Conference Paper

References (12)