Effects of thickness on properties of ZnO films grown on Si by MOCVD

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 11, 2005, Pages 2069-2073

  Shen, Wenjuan ^a   Wang, Jun ^a   Duan, Yao ^a   Wang, Qiyuan ^a   Zeng, Yiping ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Metal organic chemical vapor deposition; Photoluminescence spectrum; X ray diffraction; Zinc compound

Indexed keywords

CRYSTAL STRUCTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH;

HIGHLY PREFERENTIAL C-AXIS ORIENTATION; METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); PHOTOLUMINESCENCE SPECTRUM; SURFACE MORPHOLOGY; THICKNESS; ZINC OXIDE FILMS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 33644859166     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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