Simulation study of repeatability and bias in the critical dimension scanning electron microscope

Journal of Microlithography, Microfabrication and Microsystems

Volumn 4, Issue 3, 2005, Pages

  Villarrubia, John S ^a   Vladár, András E ^a   Postek, Michael T ^a,b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Nano scale Metrology Group   (United States)

Author keywords

Critical dimension metrology; Linewidth metrology; Model based library; Precision; Repeatability; Resolution; Scanning electron microscopy

Indexed keywords

CRITICAL DIMENSION METROLOGY; LINEWIDTH METROLOGY; MODEL-BASED LIBRARY; PRECISION; REPEATABILITY; RESOLUTION;

ACOUSTIC NOISE; ALGORITHMS; MONTE CARLO METHODS; OPTICAL RESOLVING POWER;

SCANNING ELECTRON MICROSCOPY;

EID: 33644763295     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.2037447     Document Type: Article

References (15)

1. International Technology Roadmap for Semiconductors (Semiconductor Industry Association, 2003), Table 116a, see http://public.itrs.net.
2. D. C. Joy, "Some issues in SEM-based metrology," Proc. SPIE 3332, 102-109 (1998).
3. J. R. Lowney, "Application of Monte Carlo simulations to critical dimension metrology in a scanning electron microscope," Scanning Microsc. 10, 667-678 (1996).
4. J. R. Lowney, A. E. Vladár, and M. T. Postek, "High-accuracy critical-dimension metrology using a scanning electron microscope," Proc. SPIE 2725, 515-526 (1996).
5. R. Browning, T. Eimori, E. P. Traut, B. Chui, and R. F. W. Pease, "An elastic cross section model for use with Monte Carlo simulations of low energy electron scattering from high atomic number targets," J. Vac. Sci. Technol. B 9(6), 3578-3581 (1991).
6. D. C. Joy and S. Luo, "An empirical stopping power relationship for low-energy electrons," Scanning 11, 176-180 (1989).
7. M. Kotera, R. Ijichi, T. Fujiwara, H. Suga, and D. Wittry, "A simulation of electron scattering in metals," Jpn. J. Appl. Phys., Part 1 29(10), 2277-2282 (1990).
8. C. Möller, "Zur theorie des durchgangs schneller elektronen durch materie," Ann. Phys. 14, 531 (1932).
9. R. D. Evans, The Atomic Nucleus, McGraw-Hill, New York (1955).
10. J. S. Villarrubia, A. E. Vladár, B. D. Bunday, and M. Bishop, "Dimensional metrology of resist lines using a SEM model-based library approach," Proc. SPIE 5375, 199-209 (2004).
11. J. S. Villarrubia, A. E. Vladár, J. R. Lowney, and M. T. Postek, "Scanning electron microscope analog of scatterometry," Proc. SPIE 4689, 304-312 (2002).
12. M. P. Davidson and A. E. Vladár, "An inverse scattering approach to SEM line width measurements," Proc. SPIE 3677, 640-649 (1999).
13. J. S. Villarrubia, A. E. Vladár, J. R. Lowney, and M. T. Postek, "Edge determination for polycrystalline silicon lines on gate oxide," Proc. SPIE 4344, 147-156 (2001).
14. V. A. Ukraintsev, "Effect of bias variation on total uncertainty of CD measurements," Proc. SPIE 5038, 644-650 (2003).
15. Guide to the Expression of Uncertainty in Measurement, International Organization for Standardization, Geneva, Switzerland (1993, corrected and reprinted in 1995). Also available as a U.S. National Standard: NCSL Z540-2-1997.