Grain growth and residual stress in BST thin films

Integrated Ferroelectrics

Volumn 71, Issue , 2005, Pages 107-113

  Nothwang, W D ^a   Cole, M W ^a   Hirsch, S G ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

BST; Grain coalescence; Grain growth; Residual stress; Thin films

Indexed keywords

BARIUM COMPOUNDS; COALESCENCE; DIELECTRIC FILMS; RESIDUAL STRESSES; SINGLE CRYSTALS; STRESS RELAXATION; THIN FILMS;

BST; CRYSTAL SUBSTRATES; GRAIN COALESCENCE; STRESS RELAXATION PATHWAYS;

GRAIN GROWTH;

EID: 33644757721     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580590964736     Document Type: Conference Paper

References (13)

1. R. P. Vinci and J. J. Vlassak, Ann. Rev. Mat. Sc. 26, 431-462 (1996).
2. V. Nagarajan, S. P. Alpay, C. S. Ganpule, B. K. Nagaraj, S. Aggarwal, E. D. Williams, A. L. Rooytburd, and R. Ramesh, Applied Physics Letters 77(3), 439-440 (2000).
3. Z. G. Ban and S. P. Alpay, J. Applied Physics 93(1), 504-511 (2003).
4. J. S. Vermaak, C. W. Mays, and D. Kullman-Wilsdorf, Surface Science 12(2), 128-133 (1968)
5. L. B. Freund and E. Chason, J. Applied Physics 89(9), 4866-4873 (2001).
6. P. Chaudhari, J. Vacuum Science and Technology 9(1), 520-522 (1972).
7. W. D. Nix, Metall. Trans. A 20, 2217 (1989).
8. C. L. Canedy, H. Li, S. P. Alpay, L. Salamanca-Riba, A. L. Roytburd, and R. Ramesh, Applied Physics Letters 77(1), 1695-1697 (2000).
9. Aberman and Koch, Thin Solid Films 66, 217 (1980).
10. M. W. Cole, W. D. Nothwang, C. Hubbard, E. Ngo, and M. Ervin, J. Applied Physics, 93(11), 9218-9225 (2003).
11. W. D. Nothwang, M. W. Cole, C. Hubbard, and E. Ngo, J. Electrochem. Soc. 152, F37 (2005).
12. H. Dobberstein and R. W. Schwartz, Proc. Symp. Advanced Materials for Next Generation - Prelude to Functinal-Integrated Materials, AIST Chubu, Nagoya, Japan (2002).
13. J. J. Vlassak, Thin Film Mechanics, Harvard University, Boston, MA (2004).