Growth of hafnium oxide films by metalorganic chemical vapor deposition using oxygen-free Hf[N(C2H5)2]4 precursor and their properties

Integrated Ferroelectrics

Volumn 57, Issue , 2003, Pages 1185-1192

  Takahashi, K ^a   Nakayama, M ^a   Hino, S ^a   Tokumitsu, E ^a,b   Funakubo, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Hafnium oxide; High ; MOCVD

Indexed keywords

AMORPHOUS FILMS; CAPACITANCE; FILM GROWTH; HIGH TEMPERATURE EFFECTS; HYSTERESIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON;

ALKOXIDE; CAPACITANCE VOLTAGE CURVE; DEPOSITION TEMPERATURE; HAFNIUM OXIDE FILMS;

HAFNIUM COMPOUNDS;

EID: 33644683237     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580390259614     Document Type: Article

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