A one-dimensional model for the growth of CdTe quantum dots on Si substrates

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 352, Issue 3, 2006, Pages 216-221

  Ferreira Jr , S C ^a,b   Ferreira, S O ^a  

^a FEDERAL UNIVERSITY OF VIÇOSA   (Brazil)

^b FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

Author keywords

Diffusion, interface formation; Interface structure and roughness; Monte Carlo simulations; Quantum dots

Indexed keywords

CADMIUM TELLURIDE; GRAPHENE QUANTUM DOTS; II-VI SEMICONDUCTORS; INTELLIGENT SYSTEMS; MONTE CARLO METHODS; NANOCRYSTALS; SILICON; SIZE DISTRIBUTION;

DEPOSITION MODELING; INTERFACE FORMATION; INTERFACE STRUCTURE AND ROUGHNESS; LOWER TEMPERATURES; ONE-DIMENSIONAL MODEL; STRANSKI-KRASTANOW GROWTH MODE; THERMALLY ACTIVATED DIFFUSION; VOLMER-WEBER GROWTH MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33644676348     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2005.11.076     Document Type: Article

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