Interface composition dependence of the band offset in InAs/GaSb

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 823-826

  Daly, M S ^a   Symons, D M ^a   Lakrimi, M ^a   Nicholas, R J ^a   Mason, N J ^a   Walker, P J ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HYDROSTATIC PRESSURE; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

BAND ALIGNMENT; INTERFACE MONOLAYERS; MAGNETOTRANSPORT MEASUREMENTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030146893     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/001     Document Type: Article

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