Inhomogeneous broadening arising from interface fluctuations in strained In x Ga 1-x As/GaAs and (In u Ga 1-u As) v (InP) 1-v /InP quantum wells

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 38-44

  Oliveira, C L N ^a   Freire, J A K ^a   Freire, V N ^a   Farias, G A ^a  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

Exciton; Gradual interfaces

Indexed keywords

ELECTRONIC EQUIPMENT; EXCITONS; GALLIUM; HETEROJUNCTIONS; LATTICE CONSTANTS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; STRAIN; SUPERLATTICES;

EXCITON SPECTRA; INHOMOGENEOUS BROADENING; INTERFACE FLUCTUATIONS; INTERFACIAL FLUCTUATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3342990036     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.055     Document Type: Conference Paper

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