Exciton-based photoluminescence broadening in graded ZnSe/ZnSxSe1-x strained quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 225-226

  Maia Jr , F F ^a   Freire, J A K ^a   Freire, V N ^a   Farias, G A ^a   Da Silva Jr , E F ^b  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^b FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

Author keywords

Excitons; Piezoelectric field; ZnSe ZnSSe

Indexed keywords

EXCITONS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING ZINC COMPOUNDS;

PHOTOLUMINESCENCE BROADENING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037393169     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00767-1     Document Type: Conference Paper

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4. Maia F.F. Jr., Freire V.N., Farias G.A., da Silva E.F. Jr., Freire J.A.K. Appl. Surf. Sci. 190:2002;247.