Heteroepitaxy of Ge-Si1-xGex superlattices on Si(100) substrates by GeH4-Si MBE

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1996, Pages 215-218

  Orlov, L K ^a   Tolomasov, V A ^a   Potapov, A V ^a   Drozdov, Yu N ^a   Vdovin, V I ^a  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; PLASTIC DEFORMATION; PRESSURE EFFECTS; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

HETEROEPITAXIAL GROWTH; PLASTIC DEFORMATION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030379690     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)