Defect-related current instabilities in InAs/GaAs and AlGaAs/GaAs structures?

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 565-568

  Horvath Z J ^a   Franchi, S ^a   Bosacchi, A ^a   Frigeri, P ^a   Gombia, E ^a   Mosca, R ^a   Tuyen, V V ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Current instability; Defects; GaAs AlGaAs; GaAs InAs; Minority injection; Quantum dots; Recombination

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL GROWTH; DEFECTS; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; LOW TEMPERATURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STABILITY;

CURRENT INSTABILITY; EXCESS CURRENT; MINORITY INJECTION CURRENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3342906712     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (4)