Influence of the substrate surface termination on the properties of bcc-cobalt films: GaAs(1 1 0) versus Sb/GaAs(1 1 0)

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 468-474

  Izquierdo, M ^a,b,d   Davila M E ^b   Teodorescu, C M ^b,e   Chrost, J ^a,f   Ascolani, H ^c   Avila, J ^a,b   Asensio, M C ^a,b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^c CENTRO ATÓMICO BARILOCHE   (Argentina)

^d SYNCHROTRON SOLEIL   (France)

^e DARESBURY LABORATORY   (United Kingdom)

^f FOM INSTITUTE AMOLF   (Netherlands)

Author keywords

Cobalt; GaAs; Photoemission spectroscopy; RHEED

Indexed keywords

COBALT; FERROMAGNETIC MATERIALS; INTERDIFFUSION (SOLIDS); MONOLAYERS; PHOTOEMISSION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; SYNCHROTRON RADIATION; THIN FILMS;

FERROMAGNETIC SEMICONDUCTORS; GAAS; PHOTOEMISSION SPECTROSCOPY;

GALLIUM COMPOUNDS;

EID: 3342919202     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.089     Document Type: Conference Paper

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