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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 2, 2001, Pages 384-387

Surfactant-mediated control of surface morphology for Co epitaxial film on S-passivated semiconducting substrate

(4) Nath, Krishna G a Maeda, Fumihiko a Suzuki, Satoru a Watanabe, Yoshio a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VARIABLES CONTROL; EPITAXIAL GROWTH; METHANOL; MORPHOLOGY; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SULFUR; SURFACE ACTIVE AGENTS; SYNCHROTRON RADIATION;

SURFACTANT MEDIATED CONTROL; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;

COBALT;

EID: 0035273071 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1347044 Document Type: Article

Times cited : (5)

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