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Volumn 19, Issue 3, 2001, Pages 893-898
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Low energy O2+ and N2+ beam-induced profile broadening effects in Si
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC FIELD EFFECTS;
ION BOMBARDMENT;
ION IMPLANTATION;
PROFILOMETRY;
SECONDARY ION MASS SPECTROMETRY;
SURFACE ROUGHNESS;
FIELD-INDUCED SEGREGATION;
PROFILE BROADENING;
SILICON WAFERS;
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EID: 0035334445
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1354602 Document Type: Article |
Times cited : (3)
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References (27)
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