On the segregation of Ca at SiO2/Si interface during oxygen ion bombardment

Surface and Interface Analysis

Volumn 29, Issue 2, 2000, Pages 160-167

  Deenapanray, Prakash N K ^a   Petravic, Mladen ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM; ELECTRIC FIELDS; ION BOMBARDMENT; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICA; SOLUBILITY; STOICHIOMETRY; THERMAL EFFECTS; THERMODYNAMICS;

ELECTRIC-FIELD-INDUCED MIGRATION;

SILICON;

EID: 0033908584     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(200002)29:2<160::AID-SIA723>3.0.CO;2-B     Document Type: Article

References (27)

1. For a comprehensive and systematic presentation of SIMS, see: Benninghoven A, Rüdenauer FG, Werner HW. Secondary Ion Mass Spectrometry, Wiley - Interscience: New York, 1987.
2. Herbots N, Hellman OC, Ye P, Wang X, Vancauwenberghe O. In Low Energy Ion-Surface Interactions. Rabalais JW (ed). Wiley: Chichester, 1994; Chapter 8, 387.
3. Williams JS, Petravic M, Svensson B, Conway M. J. Appl. Phys. 1994; 76: 1840.
4. Deenapanray PNK, Petravic M. Surf. Interface Anal. 1999; 27: 92.
5. Deline VR, Reuter W, Kelly R. In Secondary Ion Mass Spectrometry, SIMS V, Benninghoven A, Colton RJ, Simons DS, Werner HW (eds). Springer: Berlin, 1986; 99.
6. Petravic M, Svensson BG, Williams JS, Glasko JM. Nucl. Instrum. Methods B 1996; 118: 151.
7. Homma Y, Wittmaack K. Appl. Phys. A 1990; 50: 417.
8. Petravic M. Appl. Surf. Sci. 1998; 135: 200.
9. Deenapanray PNK, Petravic M. J. Appl. Phys. 1999; 85: 3993.
10. Vriezema CJ, Zalm PC. Surf. Interface Anal. 1991; 17: 875.
11. Vriezema CJ, Janssen KTF, Boudewijn PR. Appl. Phys. Lett. 1989; 54: 1981.
12. Wittmaack K, Homma Y. Appl. Phys. Lett. 1991; 58: 2138.
13. Williams JS, Short KT, Petravic M, Svensson BG. Nucl. Instrum. Methods B 1997; 121: 24.
14. Williams JS, Short KT, White AE. Appl. Phys. Lett. 1997; 70: 426.
15. Hues SM, Williams P. Nucl. Instrum. Methods B 1986; 15: 206.
16. Ziegler JF, Biersack JP, Littmark U. The Stopping and Range of Ions in Solids, vol. 1. Pergamon: New York, 1986.
17. Williams JS, Möller W. Nucl. Instrum. Methods 1978; 157: 213.
18. Petravic M, Svensson BG, Williams JS. Appl. Phys. Lett. 1993; 62: 278.
19. Zalm PC, Vriezema CJ. Nucl. Instrum. Methods B 1992; 67: 495.
20. Jacobson DC, Elliman RG, Gibson JM, Olson GL, Poate JM, Williams JS. Mater. Res. Soc. Symp. Proc. 1987; 74: 327.
21. Poate JM, Jacobson DC, Williams JS, Elliman RG, Boerma DO. Nucl. Instrum. Methods B 1987; 19/20: 480.
22. Maier M, Bimberg D, Baumgart H, Phillipp F. In Secondary Ion Mass Spectrometry, SIMS III, Benninghoven A, Giber J, Laszlo L, Reidel M, Werner HW (eds). Springer: Berlin, 1982; 336.
23. Sze SM. Physics of Semiconductor Devices. Wiley: New York, 1969; 425.
24. Frischat GH. Ionic Diffusion in Oxidic Glasses. Trans. Tech. Publications: Aedermannsdorf, 1975; 42.
25. Stolk PA, Gossmann H-J, Eaglesham DJ, Jacobson DC, Rafferty CS, Gilmer GH, Jaraiz M, Poate JM, Luftman HS, Hayes TE. J. Appl. Phys. 1997; 81: 6031, and references therein.
26. Wilson RG, Stevie FA, Magee CW. Secondary Ion Mass Spectrometry. Wiley: New York, 1989; Appendix D.1.
27. Williams JS, Petravic M, Conway M, Short KT. Mater. Res. Soc. Symp. Proc. 1997; 439: 575.