Total dose effects on bipolar integrated circuits: Characterization of the saturation region

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3225-3230

  Boch, J ^a   Saigne F ^b   Ducret, S ^b   Schrimpf, R D ^c   Fleetwood, D M ^c   Iacconi, P ^a   Dusseau, L ^b  

^a UNIVERSITÉ CÔTE D'AZUR   (France)

^b UNIV MONTPELLIER   (France)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

Bipolar transistor; Device characterization; Dose rate; Hardness assurance; Linear microcircuit; Saturation region; Total dose

Indexed keywords

ANNEALING; BIPOLAR TRANSISTORS; CHARACTERIZATION; DEGRADATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MOS DEVICES; SATURATION (MATERIALS COMPOSITION);

DEVICE CHARACTERIZATION; DOSE RATE; HARDNESS ASSURANCE; LINEAR MICROCIRCUIT; SATURATION REGION; TOTAL DOSE;

INTEGRATED CIRCUITS;

EID: 11044231381     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839143     Document Type: Conference Paper

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