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Volumn 12, Issue 13, 2004, Pages 2954-2959

Ultrabroadband terahertz field detection by proton-bombarded InP photoconductive antennas

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOCONDUCTIVITY; PROTON IRRADIATION; SEMICONDUCTING INDIUM PHOSPHIDE; SIGNAL TO NOISE RATIO; ULTRAFAST PHENOMENA;

EID: 4644251867     PISSN: 10944087     EISSN: None     Source Type: Journal    
DOI: 10.1364/OPEX.12.002954     Document Type: Article
Times cited : (42)

References (14)
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  • 2
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    • Detection of terahertz radiation from longitudinal optical phonon-plasmon coupling modes in InSb film using an ultrabroadband photoconductive antenna
    • P. Gu, M. Tani, K. Sakai, and T.-R. Yang, "Detection of terahertz radiation from longitudinal optical phonon-plasmon coupling modes in InSb film using an ultrabroadband photoconductive antenna," Appl. Phys. Lett. 77, 1798-1800 (2000).
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  • 3
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    • Detection of up to 20 THz with a low-temperature-grown GaAs photoconductive antenna gated with 15 fs light pulses
    • S. Kono, M. Tani, Ping Gu, and K. Sakai, "Detection of up to 20 THz with a low-temperature-grown GaAs photoconductive antenna gated with 15 fs light pulses," Appl. Phys. Lett. 77, 4104-4106 (2000).
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 4104-4106
    • Kono, S.1    Tani, M.2    Gu, P.3    Sakai, K.4
  • 4
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    • S. Kono, M. Tani, and K. Sakai, "Ultrabroadband photoconductive detection: Comparison with free-space electro-optic sampling," Appl. Phys. Lett. 79, 898-900 (2001).
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    • Kono, S.1    Tani, M.2    Sakai, K.3
  • 5
    • 0042418790 scopus 로고    scopus 로고
    • Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs
    • T. A. Liu, M. Tani, M. Nakajima, M. Hangyo and C. L. Pan, "Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs," Appl. Phys. Lett. 83, 1322-1324 (2003).
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 1322-1324
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  • 6
    • 0031223250 scopus 로고    scopus 로고
    • Ultrafast Photoconductive Detectors Based on Semi-Insulating GaAs and InP
    • M. Tani, K. Sakai and H. Mimura, "Ultrafast Photoconductive Detectors Based on Semi-Insulating GaAs and InP," Jpn. J. Appl. Phys. 36, L1175-L1178 (1997).
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  • 7
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    • Electrical properties of InP grown by gas-source molecular beam epitaxy at low temperature
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  • 10
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.