Ultrafast photoconductive detectors based on semi-insulating GaAs and InP

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 9 A/B, 1997, Pages

  Tani, Masahiko ^a   Sakai, Kiyomi ^a   Mimura, Hidenori ^b  

^a Ministry of Posts and Telecommunications   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Long carrier lifetime; LT GaAs; Photoconductive antenna; SI GaAs; SI InP

Indexed keywords

CHARGE CARRIERS; DIPOLE ANTENNAS; ELECTRIC CURRENTS; LASER PULSES; PHOTOCONDUCTING DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SIGNAL TO NOISE RATIO; ULTRAFAST PHENOMENA;

PHOTOCURRENTS;

PHOTODETECTORS;

EID: 0031223250     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1175     Document Type: Article

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