Two-beam cross-modulation photocarrier radiometry: Principles and contrast amplification in semiconductor subsurface imaging

Semiconductor Science and Technology

Volumn 21, Issue 3, 2006, Pages 320-334

  Shaughnessy, Derrick ^a   Mandelis, Andreas ^a   Batista, Jerias ^a,b   Tolev, Jordan ^a   Li, Bincheng ^a  

^a DEPARTMENT OF MECHANICAL AND INDUSTRIAL ENGINEERING   (Canada)

^b FEDERAL UNIVERSITY OF MARANHÃO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; BACKSCATTERING; CHARGE CARRIERS; HIGH ENERGY PHYSICS; IMAGING TECHNIQUES; INFRARED RADIATION; ION IMPLANTATION; PHOTONS;

CONTRAST ENHANCEMENT; ELECTRONIC CONTAMINATION; PROTON IMPLANTATION; SUBSURFACE DEFECTS;

RADIOMETRY;

EID: 32844458267     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/21/3/021     Document Type: Article

References (37)

1. Fan H Y and Becker M 1951 Semiconducting Materials (London: Butterworth) p 132
2. Visvanathan S 1960 Phys. Rev. 120 376
3. Fan H Y, Spitzer W G and Collins R J 1956 Phys. Rev. 101 566
4. Pankove J I 1971 Optical Processes in Semiconductors (New York: Dover) pp 74-5
5. Schroder D K, Thomas R N and Swartz J C 1978 IEEE J. Solid-State Circuits 31 180
6. Smith R A 1978 Semiconductors 2nd edn (Cambridge: Cambridge University Press) pp 294-300
7. Hara H and Nishi Y 1966 J. Phys. Soc. Japan 21 1222
8. Spitzer W and Fan H Y 1957 Phys. Rev. 108 268
9. Soref R A and Bennett B R 1987 IEEE J. Quantum Electron. 23 123
10. Koskowich G N, Darling R B and Soma M 1988 Phys. Rev. B 38 1281
11. Mroczkowski J A, Shanley J F, Reine M B, LoVecchio P and Polla D L 1981 Appl. Phys. Lett. 38 261
12. Kirkpatrick C G, Noonan J R and Streetman B G 1976 Radiat. Effects 30 97
13. Nakashima H, Shiraki Y and Miyao M 1979 J. Appl. Phys. 50 5966
14. Pankove J I and Wu C P 1979 Appl. Phys. Lett. 35 937
15. Shockley W and Read W T 1952 Phys. Rev. 87 835
16. Kirchhoff G 1898 Abhandlungen über Emission und Absorption ed M Planck (Leipsig: Verlag von Wilhelm Engellman) pp 11-36
17. Mandelis A, Batista J and Shaughnessy D 2003 Phys. Rev. B 67 205208
18. King O and Hall D G 1994-I Phys. Rev. B 50 10661
19. Guidotti D, Batchelder J S, Van Vechten J A and Finkel A 1986 Appl. Phys. Lett. 48 68
20. Kurner W, Sauer R, Dornen A and Thonke K 1989 Phys. Rev. B 39 13327
21. Batista J, Mandelis A and Shaughnessy D 2003 Appl. Phys. Lett. 82 4077
22. Guidotti D, Batchelder J S, Finkel A and Van Vechten J A 1988-I Phys. Rev. B 38 1569
23. Guidotti D, Batchelder J S, Finkel A, Gerber P D and Van Vechten J A 1989 J. Appl. Phys. 66 2542
24. Mandelis A 2001 Diffusion-Wave Fields: Mathematical Methods and Green Functions (New York: Springer) chapter 9
25. Mandelis A 2005 J. Appl. Phys. 97 083508
26. Batista J, Mandelis A, Shaughnessy D and Li B 2004 Appl. Phys. Lett. 85 1713
27. Mandelis A 1998 Solid-State Electron. 42 1
28. Bauda P F, Tamagawa T and Polla D L 1990 Appl. Phys. Lett. 57 2579
29. Sanii F, Giles F P, Schwartz R J and Gray J L 1992 Solid-State Electron. 35 311
30. Mandelis A, Pawlak M and Shaughnessy D 2004 Semicond. Sci. Technol. 19 1240
31. Opsal J, Taylor M W, Smith W L and Rosencwaig A 1986 J. Appl. Phys. 61 240
32. Born M and Wolf E 1980 Principles of Optics 6th edn (Oxford: Pergamon) chapters 1, 7, 13
33. Wagner R E 1994 Quantitative photomodulated optical-reflectance studies of silicon and germanium semiconductors PhD Thesis University of Toronto
34. Schroder D K 1998 Semiconductor Material and Device Characterization 2nd edn (Wiley: New York) chapter 7 pp 439-48
35. Luke K L and Cheng L-J 1987 J. Appl. Phys. 61 2282
36. Schroder D K, Thomas R N and Swartz J C 1978 IEEE Trans. Electron. Dev. 25 294
37. Edwards D F 1998 Silicon (SI) Handbook of Optical Constants of Solids ed E D Palik (Academic: New York)