AlGaN/GaN MODFETs with low ohmic contact resistances by source/drain n+ re-growth

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 431-434

  Wu, Y F ^a   Kapolnek, D ^a   Kozodoy, P ^a   Thibeault, B ^a   Keller, S ^a   Keller, B P ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; CONTACT RESISTANCE; ELECTRIC CONTACTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; MICROFABRICATION; OHMIC CONTACTS; SEMICONDUCTOR ALLOYS; SILICA;

CONVENTIONAL SCHEMES; DEEP SUB-MICRON; DEVICE PERFORMANCE; E BEAM EVAPORATION; LOW RESISTANCE; LOW-OHMIC CONTACT; MOCVD REACTOR; SOURCE-DRAIN;

WIDE BAND GAP SEMICONDUCTORS;

EID: 79957936148     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711683     Document Type: Conference Paper

References (4)

1. Y.-F. Wu, B. P. Keller, S. Keller, N. X. Nguyen, M. Le, C. Nguyen, T. J. Jenkins, L. T. Kehias, S. P. Denbaars, U. K. Mishra, "High speed and high power AlGaN/GaN MODFBTs", presented in the 55th Device Research conference, Colorado State University, June 23-25, 1997.
2. Z. Fan, S. N. Moharmmad, W. Kim, O. Aktas, A. E. Botchkarev, H. Morkoc, "Very low resistance ohmic contact to n-GaN", App. Phys. Lett. 68 (12), 1672-1674, 18 March 1996.
3. J. Burm, K. Chu, W. J. Schaff, L. F. Eastman, M. A. Khan, Q. Chen, J. W. Yang, M. S. Shur, "0. 12-am gate III-V nitride HFET's with high contact resistances", IEEE Electron Device Letters, Vol. 18, No. 4, 141-143, April 1997.
4. D, Kapolnek, S. Keller, R. Vetury, R. D Underwood, P. Kozodoy, S. P. DenBaars and U. K. Mishra, "Anisotropic epitaxial lateral growth in GaN selective area epitaxy", Appl Phys. Lett. 71 (9), 1 Sept. 1997.