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Volumn 501, Issue 1-2, 2006, Pages 318-321

Potential of Cat-CVD deposited a-SiC:H as diffusion barrier layer on low-k HSQ films for ULSI

Author keywords

a SiC:H barrier layer; Cu diffusion; HSQ; Low k dielectrics

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRODES; HYDROGEN; METALLIZING; PARAFFINS;

EID: 32644474213     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.215     Document Type: Conference Paper
Times cited : (5)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.