|
Volumn 501, Issue 1-2, 2006, Pages 318-321
|
Potential of Cat-CVD deposited a-SiC:H as diffusion barrier layer on low-k HSQ films for ULSI
|
Author keywords
a SiC:H barrier layer; Cu diffusion; HSQ; Low k dielectrics
|
Indexed keywords
CHEMICAL VAPOR DEPOSITION;
ELECTRODES;
HYDROGEN;
METALLIZING;
PARAFFINS;
A-SIC:H BARRIER LAYER;
CU DIFFUSION;
HSQ;
LOW-K DIELECTRICS;
THIN FILMS;
|
EID: 32644474213
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2005.07.215 Document Type: Conference Paper |
Times cited : (5)
|
References (10)
|