Universal three-way few-electron switch using silicon single-electron transistors

Applied Physics Letters

Volumn 85, Issue 2, 2004, Pages 308-310

  He, Jin ^a   Durrani, Zahid A K ^a   Ahmed, Haroon ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC SWITCHES; FABRICATION; LOGIC CIRCUITS; LOGIC GATES; LSI CIRCUITS; NATURAL FREQUENCIES; SIGNAL PROCESSING; SILICON ON INSULATOR TECHNOLOGY; SURFACE STRUCTURE; TUNNEL JUNCTIONS;

ELECTRON PUMPS; LOW-POWER DISSIPATION; NANOWIRE CURRENTS; SINGLE-ELECTRON TRANSISTORS (SET);

TRANSISTORS;

EID: 3242883540     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1772526     Document Type: Article

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