Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

  As, D J ^a   Richter, A ^a   Busch, J ^a   Schottker B ^a   Lubbers M ^a   Mimkes, J ^a   Schikora, D ^a   Lischka, K ^a   Kriegseis, W ^b   Burkhardt, W ^b   Meyer, B K ^b  

^a UNIVERSITY OF PADERBORN   (Germany)

^b JUSTUS LIEBIG UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATING MATERIALS; ELECTRON EMISSION; ELECTRON MOBILITY; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

BAND GAP RENORMALIZATION (BGR); CONDUCTION BANDS; DOPANTS; SEMI-INSULATING MATERIALS;

GALLIUM NITRIDE;

EID: 3242816148     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300004439     Document Type: Conference Paper

References (21)

1. K. Doverspike and J.I. Pankove, in Semiconductors and Semimetals Vol. 50, 259 (1998)
2. E.F. Schubert, I.D. Goepfert, W. Grieshaber, J.M. Redwing, Appl. Phys. Lett. 71 (7), 921 (1997)
3. E. Iliopoulos, D. Doppalapudi, H.M. Ng, T.D. Moustakas, MRS Symp. Proc. Vol. 482, 655 (1998)
4. X. Zhang, S-J. Chua, W. Liu, K-B. Chong, J. of Cryst. Growth 189/190, 687 (1998)
5. H. Tang, W. Kim, A. Botchkarev, G. Popovici, F. Hamdani and H. Morkoc, Solid-State Electronics 42 (5), 839 (1998)
6. N.G. Weimann, L.F. Eastman, D. Doppalapudi, H.M. Ng, T.D. Moustakas, J. Appl. Phys. 83 (7), 3656 (1998)
7. D.C. Look, J.R. Sizelove, Phys. Rev. Lett. 82 (6), 1237 (1999)
8. D. Schikora, M. Hankeln, D.J. As, K. Lischka, T. Litz, A. Waag, T. Buhrow and F. Henneberger, Phys. Rev. B 54 (12), R8381 (1996)
9. J.L. Souchiere, Vu Thien Binh, Surface Science 168, 52 (1986)
10. D.J. As, F. Schmilgus, C. Wang, B. Schöttker, D. Schikora, and K. Lischka, Appl. Phys. Lett. 70(10), 1311 (1997)
11. J.J. Hopfield, D.G. Thomas, M. Gershenzon, Phys. Rev. Lett. 10 (5), 162 (1963)
12. J. De-Sheng, Y. Makita, K. Ploog, H.J. Queisser, J. Appl. Phys. 53 (2), 999 (1982)
13. A.P. Abramov, I.N. Abramova, S. Yu. Verbin, I. Ya. Gerlovin, S.R. Grigorév, I.V. Ignatév, O.Z. Karimov, A.B. Novikov, and B.N. Novikov, Semiconductors 27 (7), 647 (1993)
14. E. Burstein, Phys. Rev. 83, 632 (1954)
15. E.F. Schubert, Doping in III-V Semiconductors, Cambridge University Press (1993) p.38
16. H.C. Casey, Jr. and F. Stern, J. Appl. Phys. 47, 631 (1976)
17. M. Yoshikawa, M. Kunzer, J. Wagner, H. Obloh, P. Schlotter, R. Schmitt, N. Herres, and U. Kaufmann, J. Appl. Phys. 86 (8), 4400 (1999)
18. J.R.L. Fernandez, A. Tabata, J.R. Leite, A.P. Lima, V.A. Chitta, E. Abramov, D.J. As, D. Schikora, K. Lischka, MRS Symp. Proc. Vol 595 (2000), W3.40
19. D.C. Look, in Electrical Characterization of GaAs Matertals and Devices, Wiley, Chichester (1989), p.67
20. D.J. As, K. Lischka, phys. stat. sol. (a) 176, 475 (1999)
21. J. Portmann, C. Haug, R. Brenn, T. Frey, B. Schöttker, D.J. As, Nucl. Instr. and Meth. in Phys. Res. B 155, 489 (1999)