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Volumn 189-190, Issue , 1998, Pages 687-691
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Photoreflectance study of band-gap renormalization in Si-doped GaN
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Author keywords
Band gap renormalization; MOCVD; Photoreflectace; Si doped GaN
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Indexed keywords
APPROXIMATION THEORY;
CARRIER CONCENTRATION;
ENERGY GAP;
FILM GROWTH;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING DIAMONDS;
SEMICONDUCTING FILMS;
SEMICONDUCTING SILICON;
SPECTROSCOPIC ANALYSIS;
BAND GAP RENORMALIZATION;
MANY BODY THEORY;
OPTICAL TRANSITION;
PHOTOREFLECTANCE SPECTROSCOPY;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0032090905
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00253-X Document Type: Article |
Times cited : (5)
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References (12)
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