Properties and effects of hydrogen in GaN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

  Pearton, S J ^a   Cho, H ^a   Ren, F ^a   Chyi, J I ^b   Han, J ^c   Wilson, R G ^d  

^a University of Florida   (United States)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; HYDROGEN; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ACCEPTOR DOPANTS; FORMATION PROBABILITY; MINORITY CARRIERS; P-I-N DIODES;

GALLIUM NITRIDE;

EID: 3242812822     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300004749     Document Type: Conference Paper

References (35)

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