Ion channeling analysis of gallium nitride implanted with deuterium

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Wampler, W R ^a   Myers, S M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEUTERIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; PRECIPITATION (CHEMICAL); PROTONS; SEMICONDUCTOR DOPING; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

DOPANTS; ION CHANNELING; NUCLEAR REACTIONS; WURTZITE;

GALLIUM NITRIDE;

EID: 3442875383     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002799     Document Type: Conference Paper

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