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Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 512-515

Effect of dopant flow rate upon photoluminescence properties in aluminum-doped ZnTe layers grown by MOVPE

(3) Nishio, Mitsuhiro a Guo, Qixin a Ogawa, Hiroshi a

a SAGA UNIVERSITY (Japan)

Author keywords

Al doping; MOVPE; N type doping; Photoluminescence; ZnTe

Indexed keywords

ALUMINUM; ATMOSPHERIC PRESSURE; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON EMISSION; EXCITONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING;

TRIETHYLALUMINUM;

SEMICONDUCTING FILMS;

EID: 0032628703 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01706-4 Document Type: Article

Times cited : (23)

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