Characteristics of DC reactively sputtered (Ti,Zr)N thin films as diffusion barriers for Cu metallization

Electrochemical and Solid-State Letters

Volumn 6, Issue 9, 2003, Pages

  Kuo, Yu Lin ^a   Lee, Chiapyng ^a   Lin, Jing Cheng ^b   Peng, Chao Hsien ^b   Chen, Li Chien ^b   Hsieh, Ching Hua ^b   Shue, Shau Lin ^b   Liang, Mong Song ^b   Daniels, Brian J ^c   Huang, Cheng Lin ^d   Lai, Chih Huang ^d  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c HONEYWELL   (United States)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; SUBSTRATES; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SHEET RESISTANCE;

THIN FILMS;

EID: 0042918061     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1592913     Document Type: Article

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