Improvement on the InAs quantum dot size distribution employing high-temperature GaAs(100) substrate treatment

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1503-1507

  Saucedo Zeni, N ^a   Gorbatchev, A Yu ^a   Mendez Garcia V H ^a  

^a UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

RANDOM SIZE DISTRIBUTION; SPECULAR BEAM INTENSITY; STRANSKI-KRASTANOV (SK) GROWTH MODE; WETTING LAYER (WL);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3242715992     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1705577     Document Type: Conference Paper

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