Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates

Journal of Electronic Materials

Volumn 33, Issue 7, 2004, Pages 833-839

  Boudaa, Mouloud ^a   Regreny, P ^a   Leclercq, J L ^a   Besland, M P ^a   Marty, O ^b   Hollinger, G ^a  

^a ECOLE CENTRALE DE LYON   (France)

^b UNIVERSITÉ LYON 1   (France)

Author keywords

Heteroepitaxy; InGaAs; Lattice engineered substrate; Strain relaxation

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MICROMACHINING; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL LAYERS; HETEROEPITAXY; LATTICE ENGINEERED SUBSTRATE; STRAIN RELAXATION;

GALLIUM COMPOUNDS;

EID: 3242710429     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0250-3     Document Type: Article

References (10)

1. R. Bealand, D.J. Dunstan, and P.J. Goodhew, Adv. Phys. 45, 87 (1995).
2. Y.H. Lo, Appl. Phys. Lett. 59, 2311 (1991).
3. K. Vanhollebeke, I. Moerman, P. Van Daele, and P. Demeester, Progr. Cryst. Growth Charact. 41, Issues 1-4 (2000), pp. 1-55.
4. K.D. Hobart, F.J. Kub, M. Fatemi, M.E. Twigg, P.E. Thomson, T.S. Kuan, and O.K. Inoki, J. Electron. Mater. 29, 897 (2000).
5. J.F. Damlencourt, J.L. Leclercq, M. Gendry, M. Garrigues, N. Aberkane, and G. Hollinger, Jpn. J. Appl. Phys. 38, L996 (1999).
6. J.F. Damlencourt, J.L. Leclercq, M. Gendry, P. Regreny, and G. Hollinger, Appl. Phys. Lett. 75, 3638 (1999).
7. C. Seassal, J.L. Leclercq, and P. Viktorovitch, J. Micromech. Microeng. 249, 6 (1996).
8. K. Streubel, S. Rapp, J. André, and N. Chitica, Electron. Lett. 32, 1369 (1996).
9. G. Patriache, F. Jeannes, J.L. Oudar, and F. Glas, J. Appl. Phys. 82, 4892 (1997).
10. M. Gendry and G. Hollinger, Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications (Singapore: World Scientific, 1995), pp, 572-581.