Ti and TiOx seeding influence on the orientation and ferroelectric properties of sputtered PZT thin films

Sensors and Actuators, A: Physical

Volumn 113, Issue 3, 2004, Pages 376-381

  Millon, C ^a   Malhaire, C ^a   Barbier, D ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Ferroelectric; Nucleation; Piezoelectric; PZT; Seeding

Indexed keywords

ANNEALING; CHEMICAL SENSORS; CRYSTALLIZATION; DEPOSITION; DIFFUSION; ELECTROCHEMICAL ELECTRODES; FERROELECTRICITY; LEAD COMPOUNDS; LEAKAGE CURRENTS; MICROELECTROMECHANICAL DEVICES; MOLECULAR STRUCTURE; NUCLEATION; SOL-GELS;

BOTTOM ELECTRODE CRYSTALLIZATION; SEEDING; SHORT-CIRCUIT PHENOMENA;

THIN FILMS;

EID: 3242701249     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.01.055     Document Type: Article

References (10)

1. Setter N. Electroceramics: looking ahead. J. Eur. Ceram. Soc. 21:2001;1279-1293.
2. Millon C., Malhaire C., Dubois C., Barbier D. Control of the Ti diffusion in Pt/Ti bottom electrodes for the fabrication of PZT thin films transducers. Mat. Sci. Semicond. Proc. 5:2003;243-247.
3. Aoki K., Fukuda Y., Numata K., Nishimura A. Jpn. J. Appl. Phys. 34:1995;192-195.
4. 3 sur silicium pour applications aux microsystèmes, Thèse, INSA DE LYON, 1999, p. 215.
5. Yamauchi S., Yoshimaru M. Growth of [1. 1 1]-oriented lead zirconate titanate thin film with smooth surface to improve electrical properties Jpn. J. Appl. Phys. 35:1996;1553-1556.
6. 2 buffer layers. J. Phys.: Condens. Matter. 12:2000;9189-9194.
7. 2 seeding. J. Appl. Phys. 83:1998;3835-3841.
8. x seeding. Mater. Res. Bull. 35:2000;1381-1390.
9. Qin H.X., Zhu J.S., Jin Z.Q., Wang Y. PZT thin films with prefered-orientation induced by external stress. Thin Solid Film. 379:2000;72-75.
10. P. Muralt, in: Proceedings of the TATF'96 le vide Supplement, Colmar, France, 1996, pp. 45-47.