The use of CBr4 and SiBr4 doping in MOMBE and application to InP-based heterojunction bipolar transistor structures

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 389-395

  Beam III, E A ^a   Chau, H F ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROMINE COMPOUNDS; CARRIER CONCENTRATION; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SHAPE MEMORY EFFECT;

CARBON DOPING; CARBON TETRABROMIDE; DOPING CONCENTRATION; SILICON TETRABROMIDE; TRIS DIMETHYLAMINOARSENIC;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030197085     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01068-8     Document Type: Article

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