Millimeterwave and digital applications of InP-based MBE grown HEMTs and HBTs

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 8-12

  Greiling, Paul ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

GaAs; HBT; HEMT; InP; SiGe; T R modules

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

RADIO FREQUENCY DEVICES;

MOLECULAR BEAM EPITAXY;

EID: 0031141816     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01225-0     Document Type: Article

References (6)

1. C. Nguyen, et al., Proc IEDM (1995) 799.
2. C. Nguyen, et al., Presented at the Heterostructure Workshop, Sapporo, Japan (1996).
3. L. Tran, et al., IEEE MMT-S Dig. (1996) 9.
4. M. Matloubian, private communication.
5. J. Jensen, et al., GaAs IC Symp. Dig. (1992) 101.
6. R. Walden, GaAs IC Symp. Dig. (1994) 217.