Contribution of hole trap to persistent photoconductivity in n-type GaN

Journal of Applied Physics

Volumn 96, Issue 2, 2004, Pages 1019-1023

  Cai, S ^a   Parish, G ^a   Dell, J M ^a   Nener, B D ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTATIONAL METHODS; CRYOSTATS; DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; ELECTRON TRAPS; FLUXES; HOLE TRAPS; PHOTOCONDUCTIVITY; PHOTOLITHOGRAPHY; QUENCHING;

ELECTRIC ISOLATION; OPTICAL QUENCHING; PERSISTENT PHOTOCONDUCTIVITY (PPC); THERMAL ANNEALING;

GALLIUM NITRIDE;

EID: 3242664600     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1760840     Document Type: Article

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