Differences in the laser annealing of a-Si:H and a-SiC films

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Volumn , Issue , 2004, Pages 164-167

  Garcia B ^a   Estrada, M ^a   Cruz Gandarilla, F ^b   Carreno M N P ^c   Pereyra, I ^c  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZED FILMS; LASER ANNEALING; MELTING TEMPERATURE;

ANNEALING; ELECTRIC CONDUCTIVITY; EXCIMER LASERS; LASER APPLICATIONS; MELTING; PARTICLE SIZE ANALYSIS; SILICON CARBIDE; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 28544435087     PISSN: 15416275     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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