Total-dose radiation hardness of the SOI 4-gate transistor (G 4-FET)

Proceedings - Electrochemical Society

Volumn PV 2005-03, Issue , 2005, Pages 99-106

  Akarvardar, K ^a   Cristoloveanu, S ^a   Schrimpf, R D ^b   Dufrene, B ^c   Gentil, P ^a   Blalock, B J ^d   Mojarradi, M M ^e  

^a IMEP LAHC   (France)

^b VANDERBILT UNIVERSITY   (United States)

^c IBM   (United States)

^d University of Tennessee   (United States)

^e CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOSIMETERS; IRRADIATION; PARAMETER ESTIMATION; SILICON ON INSULATOR TECHNOLOGY;

BULK CONDITION MODES; TECHNOLOGICAL CONSTRAINTS;

FIELD EFFECT TRANSISTORS;

EID: 31844449766     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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