Anisotropic textured silicon obtained by stain-etching at low etching rates

Journal of Physics D: Applied Physics

Volumn 39, Issue 4, 2006, Pages 631-634

  Gonzalez Diaaz B ^a   Guerrero Lemus, R ^a   Marrero, N ^a   Hernandez Rodriguez C ^a   Ben Hander, F A ^b   Martianez Duart J M ^b  

^a UNIVERSIDAD DE LA LAGUNA   (Spain)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; LUMINESCENCE; REACTION KINETICS; SILICON; SURFACE ROUGHNESS;

ANISOTROPIC STRUCTURE; ETCHING KINETICS; ETCHING TIME;

ANISOTROPY;

EID: 32144439235     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/4/006     Document Type: Article

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