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Volumn 48, Issue 6, 2003, Pages 623-630

The effect of etching temperature on the photoluminescence emitted from, and the morphology of, p-type porous silicon

Author keywords

Photoluminescence; Porous silicon; Temperature; Viscosity

Indexed keywords

DIFFUSION; DISSOLUTION; ETCHING; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROSITY; POROUS SILICON; THERMAL EFFECTS; VISCOSITY;

EID: 0037419915     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0013-4686(02)00731-4     Document Type: Article
Times cited : (29)

References (28)
  • 10
    • 49749102445 scopus 로고
    • L.L. Shrier, R.A. Jarman, Burstein G.T. (Eds.), Ch. 11.3, 3rd ed, Oxford: Butterworth-Heinemann
    • Gabe D.R. Shrier L.L., Jarman R.A., Burstein G.T. 3rd ed. Corrosion, Ch. 11.3. 2:1994;Butterworth-Heinemann, Oxford.
    • (1994) Corrosion , vol.2
    • Gabe, D.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.