Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 469-472

  Khoury, Maroun ^a   Gunther, Allen ^a   Pivin Jr , David P ^a   Rack, Mary Jo ^a   Ferry, David K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Coulomb blockade; MOSFET; Quantum dots; Silicon quantum dot; Single electron transistors

Indexed keywords

ELECTRON GAS; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

SINGLE ELECTRON TRANSISTORS (SET);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032608295     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.469     Document Type: Article

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