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Surface Science

Volumn 600, Issue 3, 2006, Pages 610-616

Epitaxial growth of Al on Si(1 1 1) with Cu buffer layers

(6) Baeza, Patricia A a Pedersen, K a Rafaelsen, J a Pedersen, T G a Morgen, P b Li, Z c

a AALBORG UNIVERSITY (Denmark)

b UNIVERSITY OF SOUTHERN DENMARK (Denmark)

c AARHUS UNIVERSITY (Denmark)

Author keywords

Growth; Quantum confinement; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

ALUMINUM; COPPER; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SILICON; SYNCHROTRON RADIATION; THIN FILMS;

QUANTUM CONFINEMENT; VALENCE BAND SPECTRA;

SURFACE STRUCTURE;

EID: 31744452042 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2005.11.015 Document Type: Article

Times cited : (3)

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