Epitaxial growth of Cu onto Si(111) surfaces at low temperature

Surface Science

Volumn 415, Issue 3, 1998, Pages 363-375

  Zhang, Z H ^a,b   Hasegawa, S ^a   Ino, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b Komatsu Silicon America Inc   (United States)

Author keywords

Copper; Electron solid diffraction; Epitaxy; Metal semiconductor interfaces; Metal semiconductor nonmagnetic thin film structures; Metallic films; Molecular beam epitaxy; Reflection high energy electron diffraction (RHEED); Silicon; Single crystal epitaxy

Indexed keywords

COPPER; INTERFACES (MATERIALS); METALLIC FILMS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUPERLATTICES; SURFACES;

ELECTRON SOLID DIFFRACTION; METAL SEMICONDUCTOR INTERFACES; METAL SEMICONDUCTOR NONMAGNETIC THIN FILM STRUCTURES; SINGLE CRYSTAL SURFACES; SOLID PHASE EPITAXY; SURFACE DEFECTS;

EPITAXIAL GROWTH;

EID: 0032500411     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00572-X     Document Type: Article

References (28)

1. E. Daugy, P. Mathiez, F. Salvan, J.M. Layet, Surf. Sci. 154 (1985) 267.
2. H. Kermmann, F. Muller, H. Neddermeyer, Surf. Sci. 192 (1987) 11.
3. G. Rossi, I. Lindau, Phys. Rev. B 28 (1983) 3597.
4. St. Tosch, H. Neddermeyer, Surf. Sci. 211-213 (1989) 133.
5. H. Neddermeyer, Solid state and Mat. Sci. 16 (5) (1990) 309.
6. K. Takayanagi, Y. Tanishino, S. Takahashi, M. Takahashi, Surf. Sci. 164 (1985) 77.
7. T. Yasue, T. Koshikawa, Surf. Sci. 287/288 (1993) 1025.
8. M. Jalochowski, E. Bauer, Phys. Rev. B 37 (1988) 8622.
9. M. Jalochowski, E. Bauer, J. Appl. Phys. 63 (9) (1988) 4501.
10. M. Jalochowski, E. Bauer, Phys. Rev. B 38 (1988) 5272.
11. G. Meyer, K.H. Rieder, Surf. Sci. 64 (24)25) (1994) 3560 Surf. Sci. 331 (1995) 600.
12. G. Meyer, K.H. Rieder, Surf. Sci. 64 (24)25) (1994) 3560 Surf. Sci. 331 (1995) 600.
13. T.I.M. Bootsma, T. Hibma, Surf. Sci. 331-333 (1995) 636.
14. Z.H. Zhang, S. Hasegawa, S. Ino, Phys. Rev. B 55 (1997) 9983.
15. G. Rossi, T. Kendelwicz, I. Lindau, W.E. Spicer, J. Vac. Sci. Technol. A 1 (1983) 987.
16. Z.H. Zhang, S. Hasegawa, S. Ino, in: X. Xie, S.Y. Tong, M.A. Van Hove (Eds.), The Structure of Surface IV, World Scientific, Singapore, 1994, p. 367.
17. T. Takahashi, K. Izumi, T. Ishikawa, S. Kikuta, Surf. Sci. 183 (1987) L302.
18. J.H. Neave, B.A. Joyce, P.J. Dobson, N. Norton, Appl. Phys. A 31 (1983) 1.
19. J.H. Neave, P.J. Dobson, B.A. Joyce, J. Zhang, Appl. Phys. Lett. 47 (1985) 100.
20. P.I. Cohen, G.S. Petrich, P.R. Pukite, G.J. Whaley, A.S. Arrott, Surf. Sci. 216 (1989) 222.
21. P.I. Cohen, G.S. petrich, P.R. Pukite, A.S. Arrott, Surf. Sci. 216 (1989) 39.
22. P.R. Pukite, C.S. Lent, P.I. Cohen, Surf. Sci. 161 (1985) 39.
23. A.S. Arott, B. Heinrich, S.T. Purcell, Kinetics of Ordering and Growth at Surface, Plenum Press, New York, 1990, p. 321.
24. Y. Gotoh, S. Ino, Japan. J. Appl. Phys. 12 (1978) 2097.
25. Y. Gotoh, S. Ino, Thin Solid Film 109 (1983) 255.
26. Y. Horio, A. Ichimaya, Surf. Sci. 298 (1993) 261.
27. P.A. Maksym, Z. Mitura, M.G. Knibb, Surf. Sci. 298 (1993) 293.
28. B. Poelsema, R. Kunkel, N. Nagel, A.F. Becker, G. Rosenfeld, L.K. Verheij, G. Comsa, Appl. Phys. A 53 (1991) 369.