Optimum Cu buffer layer thickness for growth of metal overlayers on Si (111)

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 15, 2002, Pages 1534061-1534064

  Pedersen, Kjeld ^a   Kristensen, Thomas B ^a   Pederser, Thomas G ^a   Morgen, Per ^b   Li, Zheshen ^c   Hoffman, Søren V ^c  

^a AALBORG UNIVERSITY   (Denmark)

^b UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

^c AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; SILICON; SILVER;

ARTICLE; CRYSTAL STRUCTURE; DRY DEPOSITION; ELECTRON DIFFRACTION; FILM; NANOTECHNOLOGY; PHASE TRANSITION; QUANTUM MECHANICS; SEMICONDUCTOR; SURFACE PROPERTY; SYNCHROTRON;

EID: 0041569208     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.153406     Document Type: Article

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